(China (Mainland))
Product Summary
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
Parametrics
Drain-source voltage 600V
Drain-gate voltage (RGS = 20 ks) 600V
Gate-source voltage +-30V
Drain current DC (Note 1): 10A, Pulse (t = 1 ms) (Note 1): 40A
Drain power dissipation (Tc = 25°C) 45W
Single pulse avalanche energy (Note 2) 363mJ
Avalanche current 10A
Repetitive avalanche energy (Note 3) 4.5mJ
Channel temperature 150°C
Storage temperature range -55 to 150°C
Note 1: Ensure that the channel temperature does not exceed 150
Note 2: VDD = 90 V, Tch = 25°C(initial), L = 6.36 mH, IAR = 10 A, RG = 25 S
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
Features
The features of 2SK4111(Q,T)can be summarized as
(1)Low drain-source ON resistance: RDS (ON) = 0.54 S(typ.);
(2)High forward transfer admittance: |Yfs| = 8.5 S (typ.);
(3)Low leakage current: IDSS = 100 μA(max) (VDS = 600 V);
(4)Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Diagrams
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