Product Summary

The SI7686DP is an N-Channel 30-V (D-S) MOSFET. It is sutiable for DC/DC Converters.

Parametrics

SI7686DP absolute maximum ratings: (1)Drain-Source Voltage, VDS: 30V; (2)Gate-Source Voltage, VGS: ±20V; (3)Continuous Drain Current (TJ=150℃), ID: 35A at Tc=25℃ or Tc=70℃; 17.9A at TA=25℃; 14.3A at TA=70℃; (4)Pulsed Drain Current, IDM: 50A; (5)Continuous Source Drain Diode Current, IS: 31.5A at TC=25℃; 4.2A at TA=25℃; (6)Maximum Power Dissipation, PD: 37.9W at TC=25℃; 24.2W at Tc=70℃; 5W at TA=25℃; 3.2W at TA=70℃; (7)operating Junction and Storage Temperature Range, TJ, Tstg: –55 to 150℃; (8)Soldering Recommendations (Peak Temperature): 260℃.

Features

SI7686DP features: (1)TrenchFET Power MOSFET; (2)New Low Thermal Resistance PowerPAK Package with Low 1.07mm Profile; (3)Optimized for High-Side Synchronous Rectifier Operation; (4)100% Rg Tested.

Diagrams

SI7686DP circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
Si7686DP
Si7686DP

Other


Data Sheet

Negotiable 
SI7686DP-T1-E3
SI7686DP-T1-E3

Vishay/Siliconix

MOSFET 30V 35A 37.9W 9.5mohm @ 10V

Data Sheet

0-1: $0.62
1-10: $0.56
10-100: $0.50
100-250: $0.48
SI7686DP-T1-GE3
SI7686DP-T1-GE3

Vishay/Siliconix

MOSFET 30V 35A 37.9W 9.5mohm @ 10V

Data Sheet

0-1: $0.59
1-10: $0.53
10-100: $0.48
100-250: $0.47